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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK31J60W5,S1VQ | 9.6500 |  |
2743 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK31J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||||
 |
RN2103,LF(CT | 0.2100 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2103 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 22 kOhms | 22 kOhms | ||||||||||||||||||||||||
 |
RN1104T5LFT | 0.3800 | |
528 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1104 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 47 kOhms | 47 kOhms | ||||||||||||||||||||||||
 |
SSM3J46CTB(TPL3) | 0.4000 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | SSM3J46 | MOSFET (Metal Oxide) | CST3B | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 10,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | - | |||||||||||||||||||||
 |
RN4911,LF(CT | 0.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4911 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz, 250MHz | 10kOhms | - | ||||||||||||||||||||||||
 |
RN1426TE85LF | 0.4200 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1426 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 1mA, 50mA | 90 @ 100mA, 1V | 300 MHz | 1 kOhms | 10 kOhms | ||||||||||||||||||||||||
 |
GT50N322A | 4.7800 | |
76 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 156 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50N322A | EAR99 | 8541.29.0095 | 50 | - | 800 ns | - | 1000 V | 50 A | 120 A | 2.8V @ 15V, 60A | - | - | ||||||||||||||||||||||
 |
TPCC8104,L1Q | - | |
5190 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCC8104 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | - | 1 (Unlimited) | 264-TPCC8104L1QTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | |||||||||||||||||||||
 |
TPH8R008NH,L1Q | 1.6400 | |
5756 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH8R008 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 34A (Tc) | 10V | 8mOhm @ 17A, 10V | 4V @ 500µA | 35 nC @ 10 V | ±20V | 3000 pF @ 40 V | - | 1.6W (Ta), 61W (Tc) | ||||||||||||||||||||
 |
TPW1R104PB,L1XHQ | 2.2600 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPW1R104 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||||
|
TPH3R506PL,LQ | 0.5263 | |
4366 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R506 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPH3R506PLLQTR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | |||||||||||||||||||||
 |
TK17E80W,S1X | 4.5900 | |
4719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | TK17E80 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32 nC @ 10 V | ±20V | 2050 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||
 |
SSM5N16FUTE85LF | - | |
5880 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SSM5N16 | MOSFET (Metal Oxide) | 5-SSOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | - | ±10V | 9.3 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||
 |
RN1601(TE85L,F) | 0.4700 | |
6159 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1601 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||
 |
SSM3J35AMFV,L3F | 0.2500 | |
58 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-723 | SSM3J35 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | ±10V | 42 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||
 |
TDTA143Z,LM | 0.1800 | |
7848 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA143 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | |||||||||||||||||||||||||
 |
TK7S10N1Z,LQ | 1.4900 | |
77 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK7S10 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1 nC @ 10 V | ±20V | 470 pF @ 10 V | - | 50W (Tc) | |||||||||||||||||||||
|
2SC2712-GR,LXHF | 0.3300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||
 |
2SA1931,NIKKIQ(J | - | |
1734 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | ||||||||||||||||||||||||||
 |
RN1710,LF | 0.3100 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN1710 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | ||||||||||||||||||||||||
 |
TK10A50D(STA4,Q,M) | 1.9000 | |
5682 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 10A (Ta) | 10V | 720mOhm @ 5A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | |||||||||||||||||||||
 |
RN4902,LXHF(CT | 0.4400 | |
1969 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4902 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz, 250MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||
 |
TK50E06K3(S1SS-Q) | - | |
5965 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tube | Obsolete | - | Through Hole | TO-220-3 | TK50E06 | - | TO-220-3 | - | RoHS Compliant | 1 (Unlimited) | TK50E06K3S1SSQ | EAR99 | 8541.29.0095 | 50 | - | - | - | - | - | - | |||||||||||||||||||||||||
|
RN1119MFV,L3F | 0.1800 | |
6434 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1119 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 1 kOhms | ||||||||||||||||||||||||||
 |
RN1510(TE85L,F) | 0.4500 | |
142 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Active | Surface Mount | SC-74A, SOT-753 | RN1510 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | ||||||||||||||||||||||||
|
TK16J60W,S1VE | 5.0500 | |
5490 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | TK16J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||
 |
SSM3J351R,LXHF | 0.6500 | |
73 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 3.5A (Ta) | 4V, 10V | 134mOhm @ 1A, 10V | 2V @ 1mA | 15.1 nC @ 10 V | +10V, -20V | 660 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
 |
2SA2195,LF | 0.5300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 2SA2195 | 500 mW | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 1.7 A | 100nA (ICBO) | PNP | 200mV @ 33mA, 1A | 200 @ 300mA, 2V | - | |||||||||||||||||||||||||
 |
RN2308,LF | 0.1800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2308 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 22 kOhms | 47 kOhms | |||||||||||||||||||||||||
 |
TK380A60Y,S4X | 1.5700 | |
63 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK380A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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